目录集成电路工程领域《半导体器件物理》课程教学大纲········································································1《微电子制造工艺》课程教学大纲········································································2《模拟集成电路设计》课程教学大纲·····································································3《数字集成电路设计》课程教学大纲·····································································4《超大规模集成电路基础》课程教学大纲·······························································51《半导体器件物理》课程教学大纲课程名称(中文):半导体器件物理学分数:2课程名称(英文):SemiconductorDevices课内学时数:60上机时数:10课外学时数:60教学方式:授课及上机教学要求:使学生掌握微电子学中半导体器件基本原理、物理机制和特性,为进一步学习有关器件的专门知识以及IC设计打下必要的基础
课程主要内容:(字以内)双极晶体管(含异质结双极晶体管)化合物半导体场效应晶体管MOSFET以及相关器件量子效应和热电子器件教材名称:现代半导体器件物理,施敏,科学出版社
主要参考书:半导体器件物理,施敏,电子工业出版社
预修课程:半导体物理适用专业:电子与通信2第3页共7页编号:时间:2021年x月x日书山有路勤为径,学海无涯苦作舟页码:第3页共7页《微电子制造工艺》课程教学大纲课程名称(中文