IC_测试报表(包括ESD、老化测试以及所对应的适用标准_Excel格式)Process_reliability

lotCumIMInfant Mortality Test--Early life testVcc+10%,125 °C, 48hours500DUTs/lot30/48hours1/5002/1500JESD74;JP-001.01High Temperature Operation Life(HTOL)--Long term life testVcc+10%,125 °C, 1000hoursLigh Temperature Operation Life(LTOL)--Long term life testVcc+10%,-10 °C, 1000hoursTHB Temperature Humidity Bias85 °C/85%RH, 1000 hours77DUTs/lot30,168,500,1000hours1/772/231 JESD22-A101TC Temperature Cycling test1. -65 to 150 °C (Condition C) 500 total cycles or2. -55 to 125 °C (Condition B) 1000 total cycles77DUTs/lot31.Test points at 0, 100, 200, 500cycles.2.Test points at 0, 100, 500, 1000cycles.1/772/231 JESD22-A104；JEDEC22-A113；MIL-STD-883E,M1010PCTPressure Cooker Test 121± 2°C/100%RH/2atmCondition Duration： A 24 hours (-0,+2) B 48 hours (-0, +2) C 96 hours (-0, +5) D 168 hours (-0, +5) E 240 hours (-0, +8) F 336 hours (-0, +8).77DUTs/lot30，1681/772/231 JEDEC-STD-22-A102-C;EIAJ ED-4701 B-123PrecondPre-ConditionStep 1 : TCT(-65°C/150°C, 5 cycles)Step 2 : Bake(125°C, 24 hours)Step 3 : Soak(30°C/60%RH, 192 hours)Step 4 : IR reflow ( 260 °C ), 3 Passes.Step 5: Scanning Acoustic MicroscopyIPC/JEDEC J-STD-020C；JESD22-A113-D；ESD Test/HBM or MMHBM: >+/-2000vMM: >+/-100V3DUTs/split(4 splits)3---0/120/36MIL-STD-883E,M3015;JEDEC-STD-22-A114B；JEDEC-STD-22-A115A；JP-001;Latch-up Test/Class1--Room Temperature: V-test: >+/-1.5Vcc; I-test: >+/-1.5Icc;Class2--Maximum Ambient Temperature: V-test: >+/-1.5Vcc; I-test: >+/-1.5Icc;4DUTs/split(2 splits)3---0/80/24JEDEC78A;JP001.01;HCIHot carrier injectionNMOS and PMOS :Vg at Max.Isub@RT2type/site;5sites/wafer;3wafer/lot3---JESD60;JESD28;TDDBTime-dependent dielectric breakdownNMOS and PMOS: Vg and Temperature at Max (CVS)2types/DUT;8DUTs/wafer;2wafer/lot2---JP-001.01VT stabilityThreshold voltage stabilityBTS: > 200 °C@Eg=+0.1-0.5 MV/cm@60s.Coo...