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第1页共11页编号：时间：2021年x月x日书山有路勤为径，学海无涯苦作舟页码：第1页共11页NewGenerationofHigh–PowerSemiconductorClosingSwitchesforPulsedPowerApplicationsI.IntroductionSolidstatesemiconductorswitchesareveryinvitingtouseatpulsedpowersystemsbecausetheseswitcheshavehighreliability,longlifetime,lowcostsduringusing,andenvironmentalsafetyduetomercuryandleadareabsent.Semiconductorswitchesareabletoworkinanyposition,so,itispossibletodesignsystemsasforstationarylaboratoryusing,andformobileusing.Thereforetheseswitchesarefrequentlyregardedasreplacementofgas-dischargedevices–ignitrons,thyratrons,sparkgapsandvacuumswitchesthatgenerallyusenowinhigh-powerelectrophysicalsystemsincludingpowerlasers.Traditionalthyristors(SCR)aresemiconductorswitchesmostlyusingforpulsedevices.SCRhassmallvalueofforwardvoltagedropatswitch-onstate,ithashighoverloadcapacityforcurrent,andatlastithasrelativelylowcostvalueduetothesimplebipolartechnology.DisadvantageofSCRisobservedatswitchingofcurrentpulseswithveryhighpeakvalueandshortduration.Reasonofthisdisadvantageissufficientlyslowprocessofswitch-onstateexpansionfromtriggeringelectrodetoexternalborderofp-njunctionaftertriggeringpulseapplying.ThisSCRfeatureisdefinedSCRusingintomillisecondrangeofcurrentswitching.ImprovementofSCRpulsecharacteristicscanbereachedbyusingofthedistributedgatedesign.Thisisallowedtodecreasethetimeoftotalswitch-onandgreatlyimproveSCRswitchingcapacity.Thus,ABBcompanyisexpandedthesemiconductorswitchusinguptomicrosecondrangebydesignofspecialpulseasymmetricthyristors(ASCR).ThesedeviceshavedistributinggatestructurelikeaGTO.Thisthyristordesignandforcedtriggeringmodeareobtainedthehighswitchingcapacityofthyristor(=150kA,=50μs,di/dt=18kA/μs,singlepulse).However,inthisdesigngatestructureiscoveredlargeactiveareaofthyristor(morethan50%)thatdecreasetheefficiencyofSiusingandincreasecostofdevice.第2页共11页第1页共11页编号：时间：2021年x月x日书山有路勤为径，学海无涯苦作舟页码：第2页共11页Si-thyristorsandIGBThavedemonstratedhighswitchingcharacteristicsatrepetitivemode.However,suchdevicesdonotintendforswitchingofhighpulsecurrents(tensofkiloamperesandmore)becauseofwell-knownphysicallimitsareexistedsuchaslowdopingofemitters,shortlifetimeofminoritycarriers,smallsizesofchipsetc.Ourinvestigationhaveobtainedthatswitchesbasedonreverse–switcheddinistorsaremoreperspectivesolid-stateswitchestoswitchsuperhighpowersatmicrosecondandsubmillisecondranges.Reverse–switcheddinistors(RSD)istwo-electrodeanalogueofreverseconductingthyristorwithmonolithicalintegratedfreewheelingdiodeinSi.ThisdiodeisconnectedinparallelandinthebackdirectiontothethyristorpartofRSD.TriggeringofRSDisprovidedbyshortpulseoftriggercurrentatbriefapplyingofreversalvoltagetoRSD.DesignofRSDismadethusthattriggeringcurrentpassesthroughdiodeareasofRSDquasiaxiallyanduniformlyalongtheSistructurearea.Thiscurrentproducestheoncominginjectionofchargecarriersfrombothemitterjunctionstobaseregionsandinitiatestheregenerativeprocessofswitch-onforRSDthyristorareas.SuchmethodoftriggeringforthisspecialdesignofSiplateisprovidedtotalanduniformswitchingofRSDalongallactiveareaintheveryshorttimelikeasdiodeswitch-on.ThefreewheelingdiodeintegratedintotheRSDstructurecouldbeusedasdampingdiodeatfaultmodeinthedischargecircuit.Thisfaultmodesuchasbreakdownofcablelinescanleadtooscillatingcurrentthroughswitch..Ithasbeenexpe...