®1/6Table 1: Main Product CharacteristicsIF(AV)2 x 30 AVRRM150 VTj175°CVF(max)0.76 VSTPS60150CPOWER SCHOTTKY RECTIFIERREV. 1Table 3: Absolute Ratings (limiting values, per diode)SymbolParameterValueUnitVRRMRepetitive peak reverse voltage150VIF(RMS)RMS forward voltage60AIF(AV)Average forward currentTc = 150°Cδ = 0.5Per diodePer device3060AIFSMSurge non repetitive forward currenttp = 10ms sinusoidal270APARMRepetitive peak avalanche powertp = 1µ s Tj = 25°C17300WTstgStorage temperature range-65 to + 175°CTjMaximum operating junction temperature *175°CdV/dtCritical rate of rise of reverse voltage10000V/µ s* : thermal runaway condition for a diode on its own heatsinkdPtotdTj---------------1Rth ja–()------------------------->KA1A2A1 KA2KTO-220ABSTPS60150CTOctober 2004FEATURES AND BENEFITS■High junction temperature capabiliy■Low leakage current■Low thermal resistance■High frequency operation■Avalanche specificationDESCRIPTIONDual center tab Schottky rectifier suited for HighFrequency server and telecom base stationSMPS. Packaged in TO-220AB, this device com-bines high current rating and low volume to en-hance both reliability and power density of theapplication.Table 2: Order CodesPart NumberMarkingSTPS60150CTSTPS60150CTSTPS60150C2/6Table 4: Thermal ParametersTable 5: Static Electrical Characteristics (per diode)Pulse test:* tp = 5 ms, δ < 2%** tp = 380 µs, δ < 2%To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.0053 IF2(RMS)SymbolParameterValueUnitRth(j-c)Junction to casePer diodeTotal1.00.7°C/WRth(c)Coupling0.4When the diodes 1 and 2 are used simultaneously:∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)SymbolParameterTests conditionsMin.TypMax.UnitIR *Reverse leakage currentTj = 25°CVR = VRRM315...
