BT1511000RT高阻断电压单相可控硅

1.Product profile1.1General descriptionPassivated thyristor in a SOT78 plastic package.1.2Features1.3Applications1.4Quick reference data2.Pinning informationBT151-1000RT12 A thyristor high blocking voltage high operatingtemperatureRev. 01 — 6 August 2007Product data sheetI High thermal cycling performanceI VDRM, VRRM is 1000 V capableI Tj is 150 °C capableI Motor controlI Static switchingI Ignition circuitsI Protection circuitsI VDRM ≤ 1000 VI IT(RMS) ≤ 12 AI VRRM ≤ 1000 VI IGT ≤ 15 mAI ITSM ≤ 120 A (t = 10 ms)I Tj ≤ 150 °CTable 1.PinningPinDescriptionSimplified outlineSymbol1cathode (K)SOT78 (3-lead TO-220AB)2anode (A)3gate (G)mbmounting base; connected to anode12mb3sym037AKGBT151-1000RT_1© NXP B.V. 2007. All rights reserved.Product data sheetRev. 01 — 6 August 20072 of 12NXP SemiconductorsBT151-1000RT12 A thyristor high blocking voltage high operating temperature3.Ordering information4.Limiting valuesTable 2.Ordering informationType numberPackageNameDescriptionVersionBT151-1000RTSC-46plastic single-ended package; heatsink mounted; 1 mounting hole;3-lead TO-220ABSOT78Table 3.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUnitVDRMrepetitive peak off-state voltage-1000VVRRMrepetitive peak reverse voltage-1000VIT(AV)average on-state currenthalf sine wave; Tmb ≤ 134 °C;see Figure 1-7.5AIT(RMS)RMS on-state currentall conduction angles; see Figure 4and 5-12AITSMnon-repetitive peak on-statecurrenthalf sine wave; Tj = 25 °C prior tosurge; see Figure 2 and 3t = 10 ms-120At = 8.3 ms-131AI2tI2t for fusingt = 10 ms-72A2sdIT/dtrate of rise of on-state currentITM = 20 A; IG = 50 mA;dIG/dt = 50 mA/µs-50A/µsIGMpeak gate current-2APGMpeak gate power-5WPG(AV)average gate powerover any 20 ms per...