目录摘要：..........................................................................................................................10前言.............................................................................................................................11闩锁效应产生背景.....................................................................................................22CMOS反相器.............................................................................................................32.1反相器电路原理...............................................................................................32.2反相器工艺结构................................................................................................33闩锁效应基本原理.....................................................................................................43.1闩锁效应简介...................................................................................................43.2闩锁效应机理研究...........................................................................................43.3闩锁效应触发方式...........................................................................................64闩锁措施研究.............................................................................................................64.1版图级抗栓所措施...........................................................................................64.2工艺级抗闩锁措施.............................................................................................74.3电路应用级抗闩锁措施.....................................................................................95结论.............................................................................................................................9参考文献:.....................................................................................................................10I/11CMOS集成电路闩锁效应形成机理和对抗措施摘要：CMOSScaling理论下器件特征尺寸越来越小，这使得CMOS电路结构中的闩锁效应日益突出。闩锁是CMOS电路结构所固有的寄生效应，这种寄生的双极晶体管一旦被外界条件触发，会在电源与地之间形成大电流通路，导致器件失效。闩锁效应已成为CMOS集成电路在实际应用中主要失效的原因之一。本文以反相器电路为，介绍了CM0S集成电路的工艺结构；采用双端PNPN结构模型．较为详细地分析了CM0S电路闩锁效应的形成机理；给出了产生闩锁效应的必要条件与闩锁的触发方式，介绍了在电路版图级、工艺级和电路应用时如何采用各种有效的技术手段来避免、降低或消除闩锁的形成，这是CMOS集成电路得到广泛应用的根本保障。关键词：CM0S集成电路；闩锁效应；功耗；双端pnpn结；可控硅StudyonthemechanismofLatch-upeffectinCMOSICanditscountermeasuresWangxinAbstract:DevicechannellengthbecomemoreandmoreshortunderCMOSScaling,suchthatlatch-upeffectinCMOSstructureisstandoutincreasingly．Latch—upisaparasiticeffectinCMOScircuits．OncetheparasiticBJTistriggered,therewillbehighcurrentfromVDDtoGND，whichmakesthechipinvalidation．Latch—upphenomenonbecomethemainreasonofCMOSICapplied．Basedoninverter，thestructureofCMOSICarepresented,ThemodelofpnpndiodeistooktoanalyzethemechanismofLatch—upeffectinCMOSIC．Thenecessaryconditionsandthetriggermodeofthelatch-uparegiven．Manymeansareintroducedtohowtoavoid，decreaseoreliminatetheLatch—upeffectinlayout，technologicalprocessandcircuitsapplicationlevel.ItguaranteethewideutilizationforCMOSIC.Keywords:CMOSIC；La...
