May. 2011. Version 1.2 MagnaChip Semiconductor Ltd. 1MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25oC ID 100.0 A TC=70oC 94.0 TA=25oC 36.1(3) TA=70oC 28.8(3) Pulsed Drain Current IDM 100 A Power Dissipation TC=25oC P D 78.1 W TC=70oC 50.0 TA=25oC 5.5(3) TA=70oC 3.5(3) Single Pulse Avalanche Energy (2) EAS 287 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) Steady State R θJA 22.7 oC/W Thermal Resistance, Junction-to-Case Steady State R θJC 1.6 MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ Features VDS = 30V ID = 100A @VGS = 10V R DS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested General Description The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. DGSPowerDFN56 S S S G G S S S D D D D D D D D May. 2011. Version 1.2 MagnaChip Semiconductor Ltd. 2MDU1511 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status MDU1511RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID...
