24LC02BVIP专享

© 1995 Microchip Technology Inc.DS20071G-page 1 FEATURES • Single supply with operation down to 2.5V• Low power CMOS technology- 1 mA active current typical- 10 µ A standby current typical at 5.5V- 5 µ A standby current typical at 3.0V• Organized as a single block of 128 bytes (128 x 8) or 256 bytes (256 x 8)• Two wire serial interface bus, I 2 C ™ compatible• 100kHz (2.5V) and 400kHz (5V) compatibility• Self-timed write cycle (including auto-erase)• Page-write buffer for up to 8 bytes• 2 ms typical write cycle time for page-write• Hardware write protect for entire memory• Can be operated as a serial ROM• Factory programming (QTP) available• ESD protection > 3,000V • 10,000,000 ERASE/WRITE cycles guaranteed on 24LC01B• 1,000,000 E/W cycles guaranteed on 24LC02B* • Data retention > 200 years• 8 pin DIP or SOIC package• Available for extended temperature ranges- Commercial0˚Cto+70˚C- Industrial: -40˚C to+85˚C DESCRIPTION The Microchip Technology Inc. 24LC01B and 24LC02Bare 1K bit and 2K bit Electrically Erasable PROMs. Thedevices are organized as a single block of 128 x 8 bitor 256 x 8 bit memory with a two wire serial interface.Low voltage design permits operation down to 2.5 voltswith a standby and active currents of only 5 µ A and 1mA respectively. The 24LC01B and 24LC02B alsohave page-write capability for up to 8 bytes of data.The 24LC01B and 24LC02B are available in the stan-dard 8-pin DIP and an 8-pin surface mount SOIC pack-age. PACKAGE TYPEBLOCK DIAGRAM12348765 A0A1A2V SSVWPSCLSDACC12348765VWPSCLSDACCA0A1A2V SSDIPSOIC24LC01B/02B24LC01B/02BHV GENERATOREEPROM ARRAYPAGE LATCHESYDECXDECSENSE AMPR/W CONTROLMEMORYCONTROLLOGICI/OCONTROLLOGICWPSDAS...