1.Product profile1.1General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.1.2Features and benefits Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology1.3Applications Logic level translators High-speed line drivers1.4Quick reference data2.Pinning information2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 — 8 September 2011Product data sheetSOT23Table 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage25 °C≤ Tj ≤ 150 °C--60VIDdrain currentVGS = 10 V; Tsp = 25 °C;see Figure 1; see Figure 3--300mAPtottotal power dissipationTsp = 25 °C;see Figure 2--0.83WStatic characteristicsRDSondrain-source on-state resistanceVGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8-2.85ΩTable 2.Pinning informationPinSymbolDescriptionSimplified outlineGraphic symbol1GgateSOT23 (TO-236AB)2Ssource3Ddrain123SDGm bb0762N7002All information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.Product data sheetRev. 7 — 8 September 20112 of 13NXP Semiconductors2N700260 V, 300 mA N-channel Trench MOSFET3.Ordering information4.Marking[1]% = placeholder for manufacturing site code5.Limiting valuesTable 3.Ordering informationType numberPackageNameDescriptionVersion2N7002TO-236ABplastic surface-mounted package; 3 leadsSOT23Table 4.Marking codesType numberMarking code[1]2N700212%Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUnitVDSdrain-source voltage25 °C≤ Tj ≤ 150 °C-60VVDGRdrain-gate voltage25 °C≤ Tj ≤ 150 °C; RGS = 20 kΩ-60VVGSgate-source voltage-3030VVGSMpeak gate-source voltagepulsed;...
