精品文档---下载后可任意编辑InAsInP 柱型量子线中隧穿时间和逃逸问题的讨论的开题报告题目：InAsInP 柱型量子线中隧穿时间和逃逸问题的讨论摘要：本文主要讨论 InAsInP 柱型量子线的隧穿时间和逃逸问题。首先介绍了量子线的基本结构和制备方法，然后介绍了量子力学中的隧穿效应及其在半导体器件中的应用。接着，利用紧束缚近似（Tight Binding Approximation）理论，建立了 InAsInP 柱型量子线的哈密顿量，并采纳数值计算方法模拟了在不同电场下的电子隧穿概率和隧穿时间。最后，讨论了 InAsInP 柱型量子线的逃逸问题，包括电子在量子线内逃逸和量子线与周围介质的耦合导致的能量逃逸。通过透彻分析光电场和局域谐振等现象，提出一种有效的逃逸抑制方法。关键词：InAsInP 柱型量子线、隧穿效应、逃逸问题、紧束缚近似、逃逸抑制方法。Abstract: This paper mainly studies the tunneling time and escape problem in InAsInP pillar quantum wires. Firstly, the basic structure and preparation method of quantum wires are introduced, and then the tunneling effect in quantum mechanics and its application in semiconductor devices are introduced. Then, the Hamiltonian of InAsInP pillar quantum wire is established by the tight-binding approximation theory, and the electron tunneling probability and tunneling time under different electric fields are simulated by numerical calculation method. Finally, the escape problem of InAsInP pillar quantum wire is discussed, including electron escape in the quantum wire and energy escape caused by the coupling between the quantum wire and the surrounding medium. By analyzing the phenomenon of photoelectric field and localized harmonics, an effective escape suppression method is proposed.Keywords: InAsInP pillar quantum wire, tunneling effect, escape problem, tight binding approximation, escape suppression method.
