可控硅BT137资料

Philips SemiconductorsProduct specification TriacsBT137S series E sensitive gateBT137M series EGENERAL DESCRIPTIONQUICK REFERENCE DATAGlasspassivated,sensitivegateSYMBOLPARAMETERMAX.MAX.MAX. UNITtriacs in a plastic envelope, suitablefor surface mounting, intended for useBT137S (or BT137M)-500E600E800EingeneralpurposebidirectionalVDRMRepetitive peak off-state500600800Vswitchingandphasecontrolvoltagesapplications, where high sensitivity isIT(RMS)RMS on-state current888Arequired in all four quadrants.ITSMNon-repetitive peak on-state656565AcurrentPINNING - SOT428PIN CONFIGURATIONSYMBOLPINStandard AlternativeNUMBERSM1MT1gate2MT2MT23gateMT1tabMT2MT2LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT-500-600-800VDRMRepetitive peak off-state-50016001800VvoltagesIT(RMS)RMS on-state currentfull sine wave; Tmb ≤ 102 ˚C-8AITSMNon-repetitive peakfull sine wave; Tj = 25 ˚C prior toon-state currentsurget = 20 ms-65At = 16.7 ms-71AI2tI2t for fusingt = 10 ms-21A2sdIT/dtRepetitive rate of rise ofITM = 12 A; IG = 0.2 A;on-state current afterdIG/dt = 0.2 A/µstriggeringT2+ G+-50A/µsT2+ G--50A/µsT2- G--50A/µsT2- G+-10A/µsIGMPeak gate current-2AVGMPeak gate voltage-5VPGMPeak gate power-5WPG(AV)Average gate powerover any 20 ms period-0.5WTstgStorage temperature-40150˚CTjOperating junction-125˚Ctemperature123tabT1T2G1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 6 A/µs.October 19971Rev 1.200Philips SemiconductorsProduct specification TriacsBT137S series E sensitive gateBT137M series ETHERMAL RESISTANCESSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITRth j-mbThermal resistancefull cycle--2.0K/Wjunction to mounting baseha...