精品文档---下载后可任意编辑TiZnSnO 非晶氧化物半导体薄膜制备及应用讨论中期报告摘要：TiZnSnO 非晶氧化物半导体薄膜是一种新型的透明导电材料，具有优良的光电性能和热稳定性能，被广泛应用于透明电极、发光二极管、薄膜晶体管等领域。本讨论采纳射频磁控溅射法在玻璃衬底上制备了TiZnSnO 非晶氧化物半导体薄膜，通过 X 射线衍射、电子显微镜、紫外–可见光吸收光谱等手段对薄膜的结构和光电性能进行了表征。实验结果表明，所制备的 TiZnSnO 非晶氧化物半导体薄膜为无定形结构，具有高透明度和低电阻率。最终目标是在此基础上进一步讨论其在透明电极、发光二极管、薄膜晶体管等领域的应用。关键词： TiZnSnO；非晶氧化物半导体薄膜；射频磁控溅射法；透明电极；发光二极管；薄膜晶体管Abstract:TiZnSnO amorphous oxide semiconductor thin film is a new type of transparent conductive material with excellent optoelectronic and thermal stability, which is widely used in transparent electrode, light-emitting diode, thin-film transistor and other fields. In this study, TiZnSnO amorphous oxide semiconductor thin films were prepared by radio frequency magnetron sputtering on glass substrates, and the structure and optoelectronic properties of the films were characterized by X-ray diffraction, electron microscopy, UV-visible absorption spectroscopy and other methods. The experimental results show that the prepared TiZnSnO amorphous oxide semiconductor thin film has an amorphous structure, high transparency and low resistance. The ultimate goal is to further study its application in transparent electrodes, light-emitting diodes, thin-film transistors and other fields based on this research.Keywords: TiZnSnO; amorphous oxide semiconductor thin film; radio frequency magnetron sputtering; transparent electrode; light-emitting diode; thin-film transistor.
