精品文档---下载后可任意编辑一维 ZnO 纳米结构单电子器件的器件制备及传输特性中期报告摘要：本次报告主要介绍了一维 ZnO 纳米结构单电子器件的器件制备及传输特性的中期讨论进展。首先介绍了一维 ZnO 纳米结构的制备方法，包括气相沉积、溶胶-凝胶法、水热法等。通过对比不同制备方法，选择了最优方法进行下一步的器件制备。在器件制备方面，采纳电子束光刻和金属蒸发技术制备了单电子晶体管。实验测量了器件的电流-电压特性，并分析了电流噪声谱和热噪声谱，验证了器件的单电子传输特性。进一步讨论了一维 ZnO 纳米线器件的传输特性，包括导电性、透过率、尺寸效应等方面。结果表明，一维 ZnO 纳米线器件具有良好的导电性和透过率，较强的尺寸效应。下一步的讨论将集中在优化器件结构，提高器件性能以及讨论器件的噪声性能等方面。关键词：一维 ZnO 纳米结构；单电子器件；电流-电压特性；传输特性；尺寸效应Abstract:This report mainly introduces the mid-term research progress of the preparation and transport characteristics of one-dimensional ZnO nanostructure single-electron devices. Firstly, the preparation methods of one-dimensional ZnO nanostructures, including chemical vapor deposition, sol-gel method, hydrothermal method, etc., were introduced. By comparing different preparation methods, the optimal method was selected for the next device preparation.In terms of device preparation, a single-electron transistor was prepared using electron beam lithography and metal evaporation technology. The current-voltage characteristics of the device were experimentally measured, and the current noise spectrum and thermal noise spectrum were analyzed to verify the single-electron transport characteristics of the device.精品文档---下载后可任意编辑Further research was conducted on the transport characteristics of one-dimensional ZnO nanowire devices, including conductivity, transmittance, size effect and other aspects. The results showed that the one-dimensional ZnO nanowire device has good conductivity and transmittance, and strong size effect.The next step of research will focus on optimizing device structure, improving device performance, and studying device noise performance, etc.Keywords: one-dimensional ZnO nanostructures; single-electron devices; current-voltage characteristics; transport characteristics; size effect.
