1学号：14101601173毕业设计（论文）题目：AlGaN-GaN异质结场效应晶体管的I-V特性研究作者彭坤届别2014学院物理与电子学院专业电子科学与技术指导老师文于华职称讲师完成时间2014.052摘要GaN基电子器件最重要的代表之一是AlGaN/GaN异质结场效应晶体管，这是因为它具有高饱和电流、比较高的跨导和较高的截止频率与很高的击穿电压等独特的物理性质。该论文正是以AlGaN/GaN异质结的基本物理特性作为研究基础来研究AlGaN/GaN异质结构场效应晶体管的I-V特性。在考虑到AlGaN/GaN异质结中的自发极化与压电极化效应的物理现象基础上，采用二维物理分析模型计算AlGaN/GaNHEMT器件的I-V特性，得到了较满意的结果。关键词：AlGaN/GaN;I-V特性;场效应晶体管,截止频率。3AbstractOneofthemostimportantelectronicdevicerepresentativeoftheGaN-basedAlGaN/GaNheterostructurefieldeffecttransistor,becauseithasahighsaturationcurrentsandhightransconductanceandahighcutofffrequencyofthehighbreakdownvoltage,andotheruniquephysicalproperties.ThepaperisthebasicphysicalcharacteristicsofAlGaN/GaNheterostructuresasaresearchfoundationtostudytheIVcharacteristicsofAlGaN/GaNheterostructurefield-effecttransistor.Basicphysicalphenomenaofspontaneouspolarizationandpiezoelectricpolarizationeffects,takingintoaccounttheAlGaN/GaNheterostructuresontheanalysisoftwo-dimensionalphysicalmodelAlGaN/GaNHEMTdeviceIVcharacteristicsobtainedsatisfactoryresults.Keywords:AlGaN/GaN;IVcharacteristics;field-effecttransistor,thecutofffrequency.4目录摘要.................................................................................................................................................................2Abstract...........................................................................................................................................................3目录.................................................................................................................................................................4第1章绪论...................................................................................................................................................51.1GaN材料的物理特性...................................................................................................................51.2GaN材料与电子器件的优势及意义...........................................................................................61.3国内外对本材料的研究动态........................................................................................................7第2章Al(Ga)N/GaN异质结构的基本物理原理.......................................................................................82.1Al(Ga)N/GaN异质结构的形成....................................................................................................82.2AlGaN/GaN异质结中二维电子气的产生机理...........................................................................82.3二维电子气的分布......................................................................................................................10第3章Al(Ga)N/GaN场效应晶体管器件的电流-电压（I-V）特性模型..............................................113.1二维分析模型..............................................................................................................................11第4章模拟结果图与数值分析.................................................................................................................144.1二维模型数值分析结果.............
