页眉内容1页脚内容金属前介质层(PMD)金属间介质层(IMD)W塞(WPLUG)钝化层(Passivation)acceptor受主,如B,掺入Si中需要接受电子Acid:酸actuator激励ADIAfterdevelopinspection显影后检视AEIAfteretchinginspection蚀科后检查AFMatomicforcemicroscopy原子力显微ALDatomiclayerdeposition原子层淀积Alignmark(key):对位标记Alignment排成一直线,对平Alloy:合金Aluminum:铝Ammonia:氨水Ammoniumfluoride:NHFAmmoniumhydroxide:NHOHAmorphoussilicon:α-Si,非晶硅(不是多晶硅)amplifier放大器AMU原子质量数Analog:模拟的analyzermagnet磁分析器Angstrom:A(E-m)埃Anisotropic:各向异性(如POLYETCH)Antimony(Sb)锑arcchamber起弧室ARC:anti-reflectcoating防反射层Argon(Ar)氩Arsenictrioxide(AsO)三氧化二砷Arsenic(As)砷Arsine(AsH)ASHER一种干法刻蚀方式Asher:去胶机ASI光阻去除后检查ASIC特定用途集成电路Aspectration:形貌比(ETCH中的深度、宽度比)ATE自动检测设备Backend:后段(CONTACT以后、PCM测试前)BacksideEtch背面蚀刻Backside晶片背面Baseline:标准流程Beam-Current电子束电流Benchmark:基准BGAballgridarray高脚封装Bipolar:双极Boat:扩散用(石英)舟Cassette装晶片的晶舟CD:crit