精品文档---下载后可任意编辑GaSb 基Ⅱ类超晶格双色红外探测器讨论中期报告摘要：本文介绍了 GaSb 基Ⅱ类超晶格双色红外探测器的讨论进展，包括材料生长、器件结构设计、性能评估等方面。利用分子束外延技术生长了 GaSb 基Ⅱ类超晶格，采纳设计优化的层间结构和多量子阱设计，成功制备了双色红外探测器，并对其性能进行评估，得到了较好的结果。讨论表明，GaSb 基Ⅱ类超晶格在双色红外探测器中具有很大的潜力，在高性能红外探测领域有宽阔的应用前景。关键词： GaSb 基Ⅱ类超晶格；双色红外探测器；器件结构设计；性能评估Abstract：This paper introduces the research progress of GaSb-based Ⅱ-VI superlattice dual-color infrared detector, including material growth, device structure design, performance evaluation and other aspects. GaSb-based Ⅱ-VI superlattice was grown by molecular beam epitaxy technology. By using optimized layer structure and multi-quantum well design, dual-color infrared detectors were successfully fabricated and their performance was evaluated with good results. The study shows that GaSb-based Ⅱ-VI superlattice has great potential in dual-color infrared detectors, and has broad application prospects in high-performance infrared detection field.Keywords：GaSb-based Ⅱ-VI superlattice; dual-color infrared detector; device structure design; performance evaluation
