sRDi1cDu电力电子开关器件仿真模型比较张薇琳张波丘东元褚利丽(广州华南理工大学电力学院,广东广州510640)ModelingofPowerElectronicDevicesZhangWei-lin,ZhangBo,QiuDong-yuan,ChuLi-li(CollegeofElectricEngineering,SouthChinaUniversityofTechnology,Guangzhou,510640,China)摘要:电力电子开关器件的模型建立一直是一个研究难点,其真实性和精确性是衡量建模的标准
本文对基本电力电子开关器件如二极管、GTO、晶闸管、MOSFET和IGBT的现有仿真模型进行了归纳和总结,并比较了各种器件不同模型之间的优缺点和适用场合,由此为电力电子开关器件的分析提供研究基础
关键字:功率二极管;GTO;晶闸管;MOSFET;IGBT;仿真模型Abstract:Thereisalwaysadifficultyinmodelingofpowerelectronicdevices,withthevalidityandaccuracyasitsjudgment
Thispaperreviewsgenericmodelingapproachesandsimulationsofsomepowerelectronicdevices,includingpowerdiode,GTO,thyristor,MOSFETandIGBT
Theirbasicprinciplesaredescribedandtheirmeritsandlimitationsareremarked,whichprovidesabasisforanalysisofpowerelectronicdevices
Keywords:powerdiode,GTO,thyristor,MOSF