一种低功耗全MOS基准电压源的设计和实现 电气工程管理专业VIP免费

一种低功耗全MOS基准电压源的设计摘要随着电子产品的更新和互联网的发展，集成电路的功耗逐渐成为制约电子产品小型化和长续航的瓶颈问题。为了适应集成电路低功耗的趋势，越来越多基准电压源的研究和设计进入了纳瓦水平。但是，传统的基准电压源电路中，电阻往往是不可缺少的，低成本的要求使得集成电路的数字化程度逐渐加深，因此研究设计结构简单，占用面积小，可使用标准数字CMOS技术实现的低功耗基准电压源具有重要的意义。本文设计的低功耗基准电压源基于MOSFET亚阈值区的特性，MOSFET阈值电压作为重点分析和考虑的因素。从物理结构分析了亚阈值区MOSFET的原理及特点，讨论了影响MOS管阈值电压大小的因素，分析了亚阈值管的部分电流电压特性。文中详细的对基准电压源整体电路结构及其工作原理作了简单介绍，并给出了各个主要子模块电路的设计。本设计基于SMIC0.18umCMOS工艺，首先设计了一种全MOSFET结构的低功耗基准电压源，性能基本达到指标要求，利用CadenceSpectre完成电路仿真并完成版图设计。本文设计的低功耗基准电压源的优势以及创新之处在于：实现了低的电路功耗，在1.8V电源电压下，输出电压为470mV时，电路的总功耗约为111nW，电源抑制比达到-30db以上，温度系数为92.8ppm/℃，最终设计达到了预期的设计目标。版图设计部分对每一个模块都进行了优化，整体采用三层金属线连接，减少了对工艺的需求。利用Calibre软件完成了电路DRC验证与LVS验证，最终完成可流片的版图，总面积为210um*140um，实现了无电阻，无双极型晶体管的全MOS结构，占用面积小，与数字CMOS工艺兼容，节省生产制造成本。关键词：低功耗，全MOS结构，基准电压源DesignofLowPowerConsumptionAllMOSReferenceVoltageSourceAbstractWiththeupdatingofelectronicproductsandtheprogressoftheInternet,thepowerconsumptionofintegratedcircuitshasgraduallybecomeabottleneckrestrictingtheminiaturizationandlong-termsustainabilityofelectronicproducts.Inordertoadapttothetrendofultra-lowpowerconsumptionofintegratedcircuits,moreandmoreresearchanddesignofreferencevoltagesourceshaveenteredtheNavalevel.However,inthetraditionalvoltagereferencecircuit,resistanceisoftenindispensable.Therequirementoflowcostmakesthedigitizationofintegratedcircuitsdeepengradually.Therefore,theresearchanddesignofultra-lowpowerreferencevoltagesourcewithsimplestructureandsmalloccupancyareacanberealizedbyusingstandarddigitalCMOStechnology.Theultra-lowpowerreferencevoltagesourcedesignedinthispaperisbasedonthecharacteristicsofthesub-thresholdregionofMOSFET.ThethresholdvoltageofMOSFETisthekeyfactorforanalysisandconsideration.Theprincipleandcharacteristicsofthesub-thresholdMOSFETareanalyzedfromthephysicalstructure.ThefactorsaffectingthethresholdvoltageoftheMOSFETarediscussed.Thepartialcurrentandvoltagecharacteristicsofthesub-thresholdMOSFETareanalyzed.Inthispaper,theoverallcircuitstructureandworkingprincipleofthereferencevoltagesourceareintroducedindetail,andthedesignofeachmainsub-modulecircuitisgiven.BasedonSMIC0.18umCMOStechnology,anultra-lowpowerreferencevoltagesourcewithall-MOSFETstructureisdesigned.Itsperformancebasicallymeetstherequirements.ThecircuitsimulationandlayoutdesignarecompletedbyCadenceSpectre.Theadvantagesandinnovationsoftheultra-lowpowerreferencevoltagesourcedesignedinthispaperlieintherealizationofultra-lowcircuitpowerconsumption.Whentheoutputvoltageis470mVat1.8Vsupplyvoltage,thetotalpowerconsumptionofthecircuitisabout111nW,thepowersupplyrejectionratioisabove-30db,andthetemperaturecoefficientis92.8ppm/.Finally,thedesignachievestheexpecteddesigngoal.Inthelayoutdesignpart,eachmoduleisoptimized,andonlytwolayersofmetalwiresareusedtoconnectthewholemodule,whi...