1XPS_Database N1s 的电子结合能： Energy (eV) Element Chemical bonding Ref395.7 N1s N-C 43396 N1s in the passive film and in the bulk 84396 N1s TiN 47396.1 N1s N-C in the TiN coatings before erosion 43396.2 N1s N bonded in AlN, Energy N2+=75,100,300,1000 eV, IAD 139396.3 N1s AlN cristal 175396.3 N1s Cr-N 225396.3 N1s N bonded in AlN, Energy N2+=500 eV, IAD 139396.4 N1s CrN 225396.4 N1s As-received AlN powder 94396.4 N1s AlN/PVB binder burnout in air 94396.4 N1s AlN/PVB binder burnout in nitrogen 94396.4 N1s AlN/PPC binder burnout in air 94396.4 N1s AlN/PPC binder burnout in nitrogen 94396.4 N1s AlN 194396.5 N1s N bonded in AlN, Magnetron, N2,N2+ Ar 139396.6 N1s CrN 150396.6 N1s TiN 197396.6 N1s Cr traité au NaNO3 17396.6 N1s Fe traité au NaNO3 17396.6 N1s N ds Fe13 (nitré) 218396.7 N1s N-Ti 43396.8 N1s N:Ti 31396.8 N1s N:Ti 208396.8 N1s N ds CrN 55396.9 N1s Interface W/TiN 148396.9 N1s Interface TiN/SiO2 (=> TiN) 148396.9 N1s TiN(100) using a photon energy between 440 and 470 eV 180396.9 N1s SS304 traité au NaNO3 17396.9 N1s interface W/TiN après bomb (275 min) 148396.9 N1s interface TiN/SiO2 après bomb (750 min) TiN pur 148396.9 N1s structure W/TiN/Si (Wpur) après bomb (525 min) 148397 N1s Mo traité au NaNO3 17397 N1s 904L traité au NaNO3 17397 N1s AL6X traité au NaNO3 17397 N1s Nads 76397 N1s CrN in alloy 24 after sputtering the passive film 116397 N1s CrN in alloy 33 after sputtering the passive film 116397.1 N1s TiN0.54 O0.17 31397.1 N1s TiN0.63 O0.08 31397.1 N1s TiN0.75 31397.1 N1s TiN0,75 208 2397.1 N1s N-Ti in the TiN coatings before and after erosion 43397.2 N1s TiN0.31 O0.44 31397.2 N1s implantation de N dans SS304 225397.2 N1s TiN0,31O0,44 208397.2 N1s Nads sur ...
