(a) (b) 圖 2-1(a)GaN(纖鋅結構) [1] (b)GaP(閃鋅結構)晶體結構圖[2] 23 (a) (Ⅰ)纖鋅結構 (Ⅱ)閃鋅結構 (b)圖 2-2(a)GaN(direct gap)[3](b)GaP(indirect gap)的能帶結構圖[4] 24 (a) 303540455055606570758005001000150020002500 GaN 2θIntensity (a
) (112)(210)(200)(103)(110)(102)(101)(002)(100) 20304050607080-1000010002000300040005000 GaPGaP (331)GaP (400)GaP (311)GaP (220)GaP (200)GaP (111) Intensity (a
)2θ (b) 圖 2-3(a)GaN(b)GaP奈米線X-ray 繞射圖[5] 25304050607080050010001500200025003000GaP (331)Si waferSi waferGaP (311)GaN (102)GaP (220)GaN (101)GaN (002)GaN (100)GaP (111)Intensity (a
)2θ GaN / GaP GaP@GaN 圖 2-4GaP@GaN奈米線X-ray繞射圖[5] 26 (a) (b) GaN GaP 圖 2-5(a)GaP@GaN TEM圖(b)GaP@GaN結構示意圖[5] 27 (a) (b) 圖 2-6(a)製程設備圖[7](b)GaP@GaN生長示意圖[7] 28 (b) (a) 圖 2-7(a)光微影基底圖(b)光微影基底細部圖 29 (a) (b) 圖 2-8(a)GaP@GaN 奈米線薄膜 SEM 圖(b)定位奈米線用之 SEM 圖 30 圖 2