[MOS管]STK0760F(韩国光电子AUK)VIP免费

KSD-T0O006-000 1 STK0760FAdvanced Pow er MOSFET Semiconductor SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(M in.) • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω (Max.) Ordering Information Ty pe NO. Marking Package Code STK0760F STK0760 TO-220F-3L Outline Dimensions unit : mm 9.80~ 10.20 15.40~15.80 Φ 3.05~ 3.35 12.20~12.60 9.10~9.30 3.46 Typ. 1.07 Min. 0.90 Max. 2.54 Typ. 2.54 Typ. 4.70 Max. 2.70 Max. 0.60 Max. 12.40~13.00 2.60~ 3.00 0.60 Max. 1 2 3 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O006-000 2 STK0760F Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃ ) 7 A Drain current (DC) ID (Tc=100℃ ) 3.2 A Drain current (Pulsed) * IDM 28 A Drain power dissipation PD 30 W Avalanche current (Single) ② IAS 7 A Single pulsed avalanche energy ② EAS 230 mJ Avalanche current (Repetitive) ① IAR 7 A Repetitive avalanche energy ① EAR 7.5 mJ Junction temperature TJ 150 Storage temperature range Tstg -55~ 150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max Unit Junction-case Rth(J-C) - 4.16 Thermal resistance Junction-ambient Rth(J-a) - 62.5 ℃ /W KSD-T0O006-000 3 STK0760F Electrical Characteristics (Tc=25°C) Characteristic SymbolTest Condition Min. Typ. Max.UnitDrain-source breakdown voltage BVDSS ID=250µA, VGS=0 600 - - V Gate threshold voltage VGS(th) ID=250µA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=600V, VGS=0V - - 1 µA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=3.5A - 1.0 1.2 Ω Forward transfer conductance ④ gfs VDS=10V,...