精品文档---下载后可任意编辑摘要：随着微电子行业的进展, 集成度不断提高、器件尺寸持续减小, 使得许多传统微电子材料和科技面临巨大挑战, 然而原子层沉积(ALD)技术作为一种优异的镀膜技术, 因其沉淀的薄膜纯度高、均匀性及保行性好, 还能十分精确地控制薄膜的厚度与成分,仍然备受关注并被广泛应用于半导体领域。本文简要介绍了 ALD 技术的原理、沉积周期、特征、优势、化学吸附自限制 ALD 技术及 ALD 本身作为一种技术的进展状况(T-ALD,PE-ALD 和 EC-ALD 等);重点叙述了 ALD 技术在半导体领域(高 k 材料、IC 互连技术等)应用。最后,对ALD 未来的进展应用前景进行了展望。关键字：原子层沉积;薄膜沉淀;高 K 材料;铜互连The Develpoement and Application of ALD TechnologySu yuanSchoolofMicroelectronics,XidianUniversity, Xi’anShanxi710071Abstract：The latest development of atomic layer deposition(ALD)technology was tentatively reviewed .ALD has been widely used in fabrication of electronics chips because ALD is capable of depositing highly pure homogenous films with well-controlled film thickness and chemical contents .The discus-sions focused on :i)the principle of ALD technology ,its characteristics,and technical advantages ;ii)the mechanisms of chemical self-limiting(CS) and possible ways to achieve ALD , such as thermal-ALD(T-ALD), plasma-enhanced ALD(PE-ALD), electro chemical ALD(EC-ALD), and etc.i;ii)its applications in synthesis ofhigh k materials , interconnecting materials for integrated circuit(IC).The development trends of ALD technology and its potential applications were also briefly discussed.Keyword：ALD ;Film-Deposition ; high-k material ; Cu-Interconnecting精品文档---下载后可任意编辑一、引言随着半导体工艺的不断进展，基于微结构的集成期间在进一步微型化和集成化，特征尺寸已经缩小到了亚微米和纳米量级。芯片尺寸以及线宽的不断缩小、功能的不断提升成为半导体制造业技术的关键，特别是对薄膜的要求日益增加，例如薄膜厚度的均匀性和质量的严格要求。这就使得传统的 CVD 沉积技术，已很难有...
