单输出与门-MC74VHC1G08DFT2G完整文件VIP免费

May,2015−Rev.21MC74VHC1G08/DMC74VHC1G08Single2-InputANDGateTheMC74VHC1G08isanadvancedhighspeedCMOS2−inputANDgatefabricatedwithsilicongateCMOStechnology.Theinternalcircuitiscomposedofmultiplestages,includingabufferoutputwhichprovideshighnoiseimmunityandstableoutput.TheMC74VHC1G08inputstructureprovidesprotectionwhenwww.onsemi.comvoltagesupto7.0Vareapplied,regardlessofthesupplyvoltage.ThisallowstheMC74VHC1G08tobeusedtointerface5.0Vcircuitsto3.0Vcircuits.FeaturesHighSpeed:tPD=3.5ns(Typ)atVCC=5.0VLowPowerDissipation:ICC=1.0µA(Max)atTA=25CPowerDownProtectionProvidedonInputsBalancedPropagationDelaysPinandFunctionCompatiblewithOtherStandardLogicFamiliesChipComplexity:FETs=62TheseDevicesarePb−FreeandareRoHSCompliantNLVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q100QualifiedandPPAPCapableSC−88A/SOT−353/SC−70DFSUFFIXCASE419ATSOP−5/SOT−23/SC−59DTSUFFIXCASE483V2=DeviceCodeM=DateCode*MARKINGDIAGRAMS51INBINAGNDFigure1.Pinout(TopView)■=Pb−FreePackage(Note:Microdotmaybeineitherlocation)*DateCodeorientationand/orpositionmayvarydependinguponmanufacturinglocation.VCCOUTYFUNCTIONTABLEINAINBOUTYFigure2.LogicSymbolORDERINGINFORMATIONSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage4ofthisdatasheet.15234V2M■■MPINASSIGNMENT1INB2INA3GND4OUTY5VCCInputsOutputABYLLLLHLHLLHHH&1V2M■■5May,2015−Rev.21MC74VHC1G08/DSemiconductorComponentsIndustries,LLC,20151PublicationOrderNumber:MC74VHC1G08www.onsemi.com2MAXIMUMRATINGSSymbolParameterValueUnitVCCDCSupplyVoltage-0.5to+7.0VVINDCInputVoltage−0.5to+7.0VVOUTDCOutputVoltage-0.5toVCC+0.5VIIKDCInputDiodeCurrent−20mAIOKDCOutputDiodeCurrent20mAIOUTDCOutputSinkCurrent12.5mAICCDCSupplyCurrentperSupplyPin25mATSTGStorageTemperatureRange-65to+150CTLLeadTemperature,1mmfromCasefor10Seconds260CTJJunctionTemperatureUnderBias+150COJAThermalResistanceSC70−5/SC−88A(Note1)TSOP−5350230C/WPDPowerDissipationinStillAirat85CSC70−5/SC−88ATSOP−5150200mWMSLMoistureSensitivityLevel1FRFlammabilityRatingOxygenIndex:28to34UL94V−0@0.125inVESDESDWithstandVoltageHumanBodyModel(Note2)MachineModel(Note3)ChargedDeviceModel(Note4)>2000>200N/AVILATCHUPLatchupPerformanceAboveVCCandBelowGNDat125C(Note5)500mAStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.1.MeasuredwithminimumpadspacingonanFR4board,using10mm−by−1inch,2−ouncecoppertracewithnoairflow.2.TestedtoEIA/JESD22−A114−A.3.TestedtoEIA/JESD22−A115−A.4.TestedtoJESD22−C101−A.5.TestedtoEIA/JESD78.RECOMMENDEDOPERATINGCONDITIONSSymbolCharacteristicsMinMaxUnitVCCDCSupplyVoltage2.05.5VVINDCInputVoltage0.05.5VVOUTDCOutputVoltage0.0VCCVTAOperatingTemperatureRange−55+125Ctr,tfInputRiseandFallTimeVCC=3.3V0.3V0100ns/VVCC=5.0V0.5V0201101001000TIME,YEARSFigure3.FailureRatevs.TimeJunctionTemperatureNORMALIZEDFAILURERATETJ=130CTJ=120CTJ=100CTJ=90CTJ=80CJunctionTemperatureCTime,HoursTime,Years801,032,200117.890419,30047.9100178,70020.411079,6009.412037,0004.213017,8002.01408,9001.01FAILURERATEOFPLASTIC=CERAMICUNTILINTERMETALLICSOCCURDeviceJunctionTemperatureversusTimeto0.1%BondFailuresMC74VHC1G08www.onsemi.com3DCELECTRICALCHARACTERISTICSSymbolParameterTestConditionsVCC(V)T...