制造技术Manufacturiog1tchnology硅片研磨表面状态的改善和研磨液的改进张伟,周建伟,刘玉岭,刘承霖(河北工业大学微电子研究所,天津30013n)摘要:在硅片研磨过程中,由于应力的积累和剧烈的机械作用,硅片表面损伤严重,碎片率增加
介绍了一种改进的研磨液,不但把剧烈的机械作用转变为比较缓和的化学.机械作用,还能起到其他较好的辅助作用并对其各成分作用,进行了理论分析
硅片表面状态得到了一定程度的改善,提高了生产效率
关键词:硅片;研磨:研磨液;应力中图分类号:TN305.2文献标识码:A文章编号:1003—353x(2006)10—0758·04TheImproVementofWaferSurfaceConditionandPolishingSlurryintheProcessofWaferPolishingZHANGWei,ZHOUJian-wei,LIUYu-ling,LIUCheng—lin(1ns“tHteofM{croetectronicsHebciUntvers{tyofTechnology,Tinnjin300、30,Chtna)Abstract:Intheprocessofwaferpolishing,thewafersurfacecouldbedamagedbadlyandfragmentratewillincreasesharply,becauseoftheaccumulationofstressandthemechanicalaction.Akindofpolishingslurryisintroducedtochangethefiercemechanicalactionintothetenderchemi-cal—mechanicalaction,andsomepositiVeeffectcanalsobemadebyit.Thewa