TLP785_TLP785F 2011-12-22 1 1 2 3 4 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector TOSHIBA Photocoupler GaAs IRED & Photo−Transistor TLP785,TLP785F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785. TLP785: 7.62mm pitch type DIP4 TLP785F: 10.16mm pitch type DIP4 Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL approved: UL1577, file No. E67349 BSI under application: BS EN60065:2002 BS EN60950-1:2006 SEMKO under application:EN60065:2002 EN60950-1:2001, EN60335-1:2002 Option(D4)type VDE approved: DIN EN60747-5-2 (Note): When an EN60747-5-2 approved type is needed, Please designate “Option (D4)” . Construction mechanical rating 7.80mm Pitch Standard Type 10.16mm Pitch TLPxxxF Type Creepage distance 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) Inner creepage distance 4.0mm(min) 4.0mm(min) Unit: mm TOSHIBA 11-5L1 Weight: 0.32 g (typ.) Unit: mm TOSHIBA 11-5L102 Weight: 0.32g (typ.) TLP785 Pin Configurations (top view) TLP785F TLP785_TLP785F 2011-12-22 2 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Type Classification (Note 1) Min Max Marking of Classification None 50 600 Blank, Rank Y 50 150 YE Rank GR 100 300...
