IRF630场效应管VIP专享

Philips SemiconductorsProduct specification N-channel TrenchMOS™ transistorIRF630, IRF630S FEATURESSYMBOLQUICK REFERENCE DATA• ’Trench’ technology• Low on-state resistanceVDSS = 200 V• Fast switching• Low thermal resistanceID = 9 ARDS(ON) ≤ 400 mΩGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-lineswitched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuitsand general purpose switching applications.The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded packageThe IRF630S is supplied in the SOT404 (D2PAK) surface mounting packagePINNINGSOT78 (TO220AB)SOT404 (D2PAK)PINDESCRIPTION1gate2drain13sourcetabdrainLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITVDSSDrain-source voltageTj = 25 ˚C to 175˚C-200VVDGRDrain-gate voltageTj = 25 ˚C to 175˚C; RGS = 20 kΩ-200VVGSGate-source voltage-± 20VIDContinuous drain currentTmb = 25 ˚C; VGS = 10 V-9ATmb = 100 ˚C; VGS = 10 V-6.3AIDMPulsed drain currentTmb = 25 ˚C-36APDTotal power dissipationTmb = 25 ˚C-88WTj, TstgOperating junction and- 55175˚Cstorage temperaturedgs13tab21 2 3tab1 It is not possible to make connection to pin:2 of the SOT404 packageAugust 19991Rev 1.100Philips SemiconductorsProduct specification N-channel TrenchMOS™ transistorIRF630, IRF630S AVALANCHE ENERGY LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITEASNon-repetitive avalancheUnclamped inductive load, IAS = 5 A;-250mJenergytp = 380 µs; Tj prior to avalanche = 25˚C;VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; referto fig;14IASPeak non-rep...