精品文档---下载后可任意编辑Bi/In，Sn/In 双金属薄膜受体材料的无掩模光刻讨论的开题报告题目: Bi/In，Sn/In 双金属薄膜受体材料的无掩模光刻讨论摘要: 本讨论旨在探究抗反射薄膜（AR）和无掩模光刻技术在 Bi/In，Sn/In 双金属薄膜受体材料中的应用。AR 薄膜是通过在薄膜表面形成多层反射率不同的薄膜结构来减少光的反射和散射的。无掩模光刻技术可以在不使用掩模的情况下直接将图形转移至薄膜表面，可以显著减少制作过程中的成本和时间。本讨论将通过先制备 Bi/In，Sn/In 双金属薄膜，然后在其表面形成AR 薄膜结构来减少光的反射和提高其吸收率。然后，利用无掩模光刻技术在薄膜表面上直接制备所需图形。最后，对制备的样品进行表征和测试，包括 SEM 观察、XRD 分析和光电性能测试等。关键词：抗反射薄膜，无掩模光刻，双金属薄膜，光电性能。Abstract: This study aims to investigate the applications of antireflective (AR) coating and maskless lithography technology in Bi/In, Sn/In bimetallic thin film receiver materials. AR coating reduces the reflection and scattering of light by forming a multi-layered film with different reflectivity on the surface of thin films. Maskless lithography technology directly transfers the desired pattern onto the film surface without using a mask, significantly reducing the cost and time of the fabrication process.In this study, Bi/In, Sn/In bimetallic thin films will be prepared first, and then an AR film structure will be formed on its surface to reduce reflection and increase its absorption. Then the desired pattern will be directly fabricated on the film surface using maskless lithography technology. Finally, the produced samples will be characterized and tested, including SEM observation, XRD analysis, and optoelectronic performance test.Keywords: antireflective coating, maskless lithography, bimetallic thin film, optoelectronic performance.
