华中科技大学电子科学与技术系电子器件制备工艺课程设计(论文)固相法制备压敏电阻(ZnO)班 级: 电子 1307 学 号: U202514003 姓 名: 仲世豪 专 业: 电子科学与技术 指导老师: 邱亚琴 二零一 五 年 摘 要本文以金属离子盐为原料, 采纳 400r/min 转速球磨机球磨成掺杂 ZnO 前驱物, 将其在 700℃下预烧 2 小时, 得到掺杂 ZnO 粉体, 并用此粉体制备了片式 ZnO 压敏电阻。借助压敏电阻特性测量仪对片式压敏电阻得正、反向压敏电压,正、反向非线性系数,正、反向漏电流等进行了测量。讨论了不同掺杂浓度对 ZnO 压敏电阻电性能得影响。结果表明,金属掺杂在百分之零点八时,ZnO 压敏得电阻得各项性能达到最佳。关键词:掺杂 ZnO 粉体;烧结温度;压敏电阻Abstract In this paper, by using metal ion salts as raw materials, which was milled at 400r / min speed ,doping into ZnO precursor, then calcined for 2 hours at 700 ℃, to get doped ZnO powder、 And the powder was at last used to produce chip ZnO varistors 、 With the varistor characteristic measurement instrument, the positive and negative varistor voltage, positive and negative nonlinear coefficient, forward and reverse leakage current were measured、 We studied the effect of doped ZnO powder on the electrical properties of ZnO varistors、 The results showed that when the doping content is 0、8％, the properties of ZnO varistor can be the best、Keywords: doped ZnO powder; sintering temperature; varistor目 录摘 要................................................................2ABSTRACT ................................................................ 1 第 1 章 绪 论 .......................................................... 1 81 、 1 概述及进展现状 ................................................. 1 51 、 2 理论依据及本论文得主要方法 .................................... 2 8第 2 章 实验部分 ........................................................ 89 2 、 1 实验工艺与过程 ...............................
