第1-2讲MOS管特性和CMOS版图基础..VIP免费

EE141©DigitalIntegratedCircuits2ndManufacturing第一、二讲MOS管特性与CMOS版图一、CMOS工艺简介；二、MOS管特性；三、Layout设计；四、估算寄生参数；五、SPICE中MOS器件参数设置参考书：[1]JanM.RabaeyAnanthaChandrakasanBorivojeNikolic，DigitalIntegratedCircuits–ADesignPerspective[2]中译本：数字集成电路：电路、系统与设计（第二版）周润德译，电子工业出版社出版1第一页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing一、CMOSManufacturingProcessTechnology(Process)三类工艺：双极型bipolar(三极管，二极管，电阻)NMOSCMOS（NMOS，PMOS）：目前主流工艺2第二页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingEE14129©DigitalIntegratedCircuits2ndIntroductionDieCostDieCostSingledieWaferFromhttp://www.amd.comGoingupto12”(30cm)3第三页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing1、Fabricationservices芯片制造代工厂（Foundry）1）TSMC台积电（台湾）可获工艺：0.5um,0.35um,0.25um,0.18um,0.13um,0.09um0.065um,0.045um2）CSM或称Chartered新加坡特许（新加坡）可获工艺：0.35um,0.25um,0.18um,0.13um,0.09um,0.065um,0.045um3）SMIC中芯国际（上海）可获工艺：0.35um,0.25um,0.18um,0.13um,0.09um4）HJTC或称HJ和舰科技(苏州)可获工艺：0.35um,0.25um,0.18um5）CSMC华润上华（无锡）可获工艺：3.0至0.5微米6）GSMC宏力(上海)可获工艺：0.25um,0.18um,0.15um7）HHNEC华虹(上海)可获工艺：0.35um,0.25um,0.18um8）SinoMOS中纬(宁波)可获工艺：0.8um/1um4第四页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing多项目晶圆服务多项目晶圆（多目标芯片）MultiProjectWafer---MPW多个使用相同工艺的设计，放在同一晶圆片上流片。每个设计可以得到数十片芯片样品。制造费用按照芯片面积分摊，成本仅为单独进行制造的5%-10%。5第五页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingEducationalservices（MPW服务机构）美国：MOSIS(MOSImplementationSupportProject)http://www.mosis.com台湾：CIC(ChipImplementationCenter)http://www.cic.org.tw/cic_v13/main.jsp欧盟：Europracticehttp://www.europractice.com/上海集成电路设计研究中心http://www.icc.cn/icc/index.asp中国科学院EDA中心http://www.eda.ac.cn/index.htm6第六页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing2、OverviewMOS管结构图:3DPerspectiveDSGGDSDSG7第七页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingsubstraten+n+p+substratemetal1polySiO2metal2metal3transistorviametal1insulator.多晶硅（衬底）Crosssection8第八页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingCMOS有三类工艺：P-WellCMOSProcess(也基本不用)N-WellCMOSProcessDual-WellCMOSProcessWell---阱9第九页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingN-WellCMOSProcess10第十页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingDual-WellCMOSProcess11第十一页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing12第十二页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing3、几种工艺方法1）oxidation（氧化）Si-substrateorP-typeorN-typeSi-substrateorP-typeorN-typeSiO2氧气SiO2是绝缘体。它的作用是什么？13第十三页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturingSiO2是绝缘体。它的作用是什么？14第十四页，共七十三页。EE141©DigitalIntegratedCircuits2ndManufacturing2）Cut（光刻）(a)Photoresis(光刻胶)PhotoresistSiO2Si-substrate(d)Finalresultafterremovalofresist去胶Si-substrate(b)Exposure曝光UV-light紫外光mask版图PhotoresistSiO2(c)Etch蚀刻chemicaletchPhotoresistSiO215第十五页，共七十三页。EE141©DigitalIntegratedC...