Michael quirk_半导体制造技术-第13章_光刻_气相成底膜到软烘VIP免费

©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaSemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter13Photolithography:SurfacePreparationtoSoftBakeSemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter13Photolithography:SurfacePreparationtoSoftBake©2000byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerda©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1.Explainthebasicconceptsforphotolithography,includingprocessoverview,criticaldimensiongenerations,lightspectrum,resolutionandprocesslatitude.2.Discussthedifferencebetweennegativeandpositivelithography.3.Stateanddescribetheeightbasicstepstophotolithography.4.Explainhowthewafersurfaceispreparedforphotolithography.5.Describephotoresistanddiscussphotoresistphysicalproperties.6.Discussthechemistryandapplicationsofconventionali-linephotoresist.7.DescribethechemistryandbenefitsofdeepUV(DUV)resists,includingchemicallyamplifiedresists.8.Explainhowphotoresistisappliedinwafermanufacturing.9.Discussthepurposeofsoftbakeandhowitisaccomplishedinproduction.©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaWaferFabricationProcessFlowImplantDiffusionTest/SortEtchPolishPhotoCompletedwaferUnpatternedwaferWaferstartThinFilmsWaferfabrication(front-end)UsedwithpermissionfromAdvancedMicroDevicesFigure13.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerda•PatterningProcess–Photomask–Reticle•CriticalDimensionGenerations•LightSpectrum•Resolution•OverlayAccuracy•ProcessLatitudePhotolithographyConcepts©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaPhotomaskandReticleforMicrolithographyPhotographprovidedcourtesyofAdvancedMicroDevices4:1Reticle1:1MaskPhoto13.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaThreeDimensionalPatterninPhotoresistLinewidthSpaceThicknessSubstratePhotoresistFigure13.2©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaSectionoftheElectromagneticSpectrumVisibleRadiowavesMicro-wavesInfraredGammaraysUVX-raysf(Hz)1010101010101010101046810121416221820(m)420-2-4-6-8-14-10-1210101010101010101010365436405248193157ghiDUVDUVVUV(nm)CommonUVwavelengthsusedinopticallithography.Figure13.3©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaImportantWavelengthsforPhotolithographyExposureUVWavelength(nm)WavelengthNameUVEmissionSource436g-lineMercuryarclamp405h-lineMercuryarclamp365i-lineMercuryarclamp248DeepUV(DUV)MercuryarclamporKryptonFluoride(KrF)excimerlaser193DeepUV(DUV)ArgonFluoride(ArF)excimerlaser157VacuumUV(VUV)Fluorine(F2)excimerlaserTable13.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaImportanceofMaskOverlayAccuracyPMOSFETNMOSFETCrosssectionofCMOSinverterTopviewofCMOSinverterThemaskinglayersdeterminetheaccuracybywhichsubsequentprocessescanbeperformed.Thephotoresistmaskpatternpreparesindividuallayersforproperplacement,orientation,andsizeofstructurestobeetchedorimplanted.Smallsizesandlowtolerancesdonotprovidemuchroomforerror.Figure13.4©2001b...