精品文档---下载后可任意编辑InGaN 材料局域化复合特性及 LED 器件发光效率的讨论的开题报告Abstract:The aim of this research is to investigate the localized carrier recombination characteristics in InGaN material and its impact on light emitting efficiency of LED devices. InGaN material has shown great potential for LED application due to its high efficiency in light emitting. However, carrier localization and non-radiative recombination can significantly reduce the emission efficiency of InGaN-based LEDs. Therefore, in this study, we will focus on the following aspects:1. The development of a comprehensive model for analyzing and predicting the bandstructure and carrier behavior in InGaN material.2. The simulation and experimental study of carrier localization and non-radiative recombination in InGaN material.3. The investigation of the relationship between the carrier localization and light emitting efficiency of LED devices based on InGaN material.To achieve these objectives, we will use state-of-the-art simulation tools and experimental techniques. The simulation will be conducted using a density functional theory (DFT) method to calculate the electronic structure of InGaN material, followed by a non-equilibrium Green's function (NEGF) method to analyze the carrier transport and recombination properties. The experimental study will involve the fabrication of InGaN-based LED devices with different structures and compositions, and the characterization of their emission properties under different bias conditions.The results of this research will provide critical insights into the localized carrier recombination characteristics in InGaN material, and its impact on LED device performance. This study will contribute to the development of more efficient InGaN-based LED devices for a wide range of applications in solid-state lighting, display, and optical communications.
