F4152AHigh Efficiency 40 mil ThinGaN® LED (455nm)2007-09-131Features•High efficiency due to new ThinGaN® concept•Lambertian Emission pattern•Ideal for LCD backlighting and coupling in light guides•Polarity: n-side up•Wavelength (typ.): 455 nm•Technology: ThinGaN®•Grouping parameters: luminous intensity, wavelengthApplications•Outdoor displays•Optical indicators•Backlighting (LCD, switches, keys, displays, illuminated advertising, general lighting)•Marker lights (e.g. steps, exit ways, etc.)•Signal and symbol luminaireTypeOrdering CodeDescriptionF4152AQ65110A704040 mil high efficiency ThinGaN® chip, 450 - 465 nm2007-09-132F4152AElectrical values1) (TA = 25 °C)ParameterSymbolValue2) Unitmin.typ.max.Dominant w avelengthIF = 350 mA, pulsedλdom450465nmReverse voltageIR = 10µAVR10VForw ard voltageIF = 350 mA, pulsedVF2.73.8VRadiant Pow erIF = 350 mA, pulsedΙV32a.u.1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragmentof a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). All el. values arereferenced to the vendor's measurement system (correlation to customer product(s) is required). Measurementuncertainty +/-15% for brightness, +/- 1nm for wavelength and +/- 0.1V for voltage.2) Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations oftechnical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parametersof each single product, which could differ from the typical data and calculated correlations or the typicalcharacteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without a...
