BT169(可控硅)

Philips SemiconductorsProduct specification ThyristorBT169W Series logic levelGENERAL DESCRIPTIONQUICK REFERENCE DATAGlasspassivated,sensitivegateSYMBOLPARAMETERMAX.MAX.MAX.MAX. UNITthyristorin aplastic envelope, suitablefor surface mounting, intended for useBT169BWDWEWGWin general purpose switching andVDRM,Repetitive peak200400500600Vphasecontrolapplications.ThisVRRMoff-state voltagesdevice is intended to be interfacedIT(AV)Average on-state0.50.50.50.5Adirectlytomicrocontrollers,logiccurrentintegratedcircuitsandotherlowIT(RMS)RMS on-state current0.80.80.80.8Apower gate trigger circuits.ITSMNon-repetitive peak8888Aon-state currentPINNING - SOT223PIN CONFIGURATIONSYMBOLPINDESCRIPTION1cathode2anode3gatetabanodeLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITBDEGVDRM, VRRM Repetitive peak off-state-2001400150016001VvoltagesIT(AV)Average on-state currenthalf sine wave;-0.63ATsp ≤ 112 ˚CIT(RMS)RMS on-state currentall conduction angles-1AITSMNon-repetitive peakhalf sine wave;on-state currentTj = 25 ˚C prior to surget = 10 ms-8At = 8.3 ms-9AI2tI2t for fusingt = 10 ms-0.32A2sdIT/dtRepetitive rate of rise ofITM = 2 A; IG = 10 mA;-50A/µson-state current afterdIG/dt = 100 mA/µstriggeringIGMPeak gate current-1AVGMPeak gate voltage-5VVRGMPeak reverse gate voltage-5VPGMPeak gate power-2WPG(AV)Average gate powerover any 20 ms period-0.1WTstgStorage temperature-40150˚CTjOperating junction-125˚Ctemperatureakg41231 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor mayswitch to the on-state. The rate of rise of current should not exceed 15 A/µs.September 19971Rev 1.200Philips SemiconductorsProduct specification ThyristorBT169W Series logic levelTHERMAL RESISTANCESSYMBOLPARAMETERCONDITION...