TIInformationTI信息–SelectiveDisclosure选择性披露TIRecommendationsforEOSPreventionandEliminationTI有关预防和消除EOS的建议March10,20102010年3月10日2TIInformationTI信息–SelectiveDisclosure选择性披露�HelpcustomersreduceEOSissues.�帮助客户减少EOS问题�ProvidegeneralguidelinestoreduceEOSriskinassemblylinesandelectricaltestareas.�提供通用指导，帮助降低在装配流水线和测试区域发生EOS的风险�ProvidegeneralguidelinesforprotectionagainstEOSinsystem,board,andsoftwaredesign.�提供通用指导，帮助提升系统、电路板和软件设计来防护EOS�DescribestepstakenbyTIandbycustomerstoaddressEOSreturnunits.�叙述了为解决返回产品的EOS问题，TI和客户所采取的步序Objectives目标3TIInformationTI信息–SelectiveDisclosure选择性披露EOS–StandsforElectricalOverstress.DuringanEOSevent,adeviceissubjectedtoavoltageorcurrentbeyondthedevicespecificationlimitsthatleadstodevicefailure.EOS–代表电过应力。元件遭遇电压或电流超过其技术规格，致使元件失效，发生EOS现象。WhatisEOS?什么是EOS？Introduction引言�ESD–StandsforElectrostaticDischarge.Transferofelectrostaticchargebetweensurfacesatdifferentpotentials.Typically,itisahighvoltage(1kV-10kV),shorttime(1nsto100ns),highcurrent(1-10Amps)event.Theenergyistypicallyinthemicro-Joulerangeandcancausesiliconmeltingandgateoxidebreakdown.ESDisasubsetofEOS.ESD–代表静电放电，指静电荷在不同静电势表面间传输。通常，它是高电压(1kV-10kV)、瞬间(1ns-100ns)和高电流(1-10Amps)效应，其能量落在微焦耳范围，并可能产生熔硅和栅氧层击穿。ESD是EOS的一种。�EOS(thatisnotcausedbyESD)–Theexposureofanitemtoacurrentorvoltagebeyonditsmaximumrating.Typically,itisanover-voltagestressthatinvolveslowvoltage(5-10V),longtime(1msto10ms),andmoderatecurrent(100mAto>1Amp).TheenergycouldbeanorderofmagnitudehigherthanESDandcancauseextensiveoxide,metaland/orsilicondamage.EOS（非ESD触发）-当运行某指标时，超过其最大额定电流或电压。通常，它是一种过压应力，伴随低电压(5-10V)、长时间(1ms-10ms)和适中电流(100mA–超过1Amp)，其能量会比ESD高一个量级，可能大范围破坏氧化层、金属和（或）硅。4TIInformationTI信息–SelectiveDisclosure选择性披露ESDExample(causedbydischarge)ESD实例(静电触发)Introduction引言Thearrowspointtoevidenceofgateoxiderupture,indicatingprobableESDdamage.箭头指向栅氧层毁坏位置，表明大致ESD损伤。Anassemblylineauditwithafieldmetermeasured5kVatastationwherechargebuild-upwascausedwhentheoperatorpeeledlabelsbeforeplacingthemonprintedcircuitboards.在巡查装配线时，用静电计在某个站点测到了了5kV静电，此时操作员正从标签纸上揭下标签，而随后她会把撕下的标签贴到印刷电路板上。TypicalevidenceofESDdamage:典型ESD损伤-Smallfocusedareaofdamage损伤区域小而集中-Onetypeofdamagemodeonly损伤模式单一-Oxidepinhole氧化层针孔-Blownpolylines多晶硅引线熔断5TIInformationTI信息–SelectiveDisclosure选择性披露Introduction引言TypicalevidenceofEOSdamage:典型EOS损伤-Damagespanningmultipleareasofthesilicon损伤覆盖芯片多个区域-Multipledamagemodesonsamedevice元件出现多种损伤模式-Carbonizedpackage封装碳化-Deepholesinsilicon硅片出现深孔Thelevelofdamageindicatesahighenergyevent.损坏程度表明高能效应。Alargeholeinsiliconwascausedbyexcessiveheatinginlocalarea.由于局部过热而发生大面积融硅。EOSExample(notcausedbydischarge)EOS实例(非静电触发)6TIInformationTI信息–SelectiveDisclosure选择性披露Introduction引言�ESDcandamage:ESD可能毁坏：−IsolatedIC,beforebeingmountedonPrintedCircuitBoard(PCB)PCB板装配前的单个IC元件−ICmountedonPCB装配在PCB板上的IC元件−ICinfini...
